Invention Grant
- Patent Title: Variable resistance memory device
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Application No.: US16741936Application Date: 2020-01-14
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Publication No.: US11276821B2Publication Date: 2022-03-15
- Inventor: Seulji Song , Jonguk Kim , Kyusul Park , Woohyun Park , Jonghyun Paek
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0124153 20191007
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24

Abstract:
A semiconductor device includes a plurality of first conductive lines disposed on a substrate, a plurality of second conductive lines intersecting the plurality of first conductive lines, and a plurality of cell structures interposed between the plurality of first conductive lines and the plurality of second conductive lines. At least one among the plurality of cell structures includes a first electrode, a switching element disposed on the first electrode, a second electrode disposed on the switching element, a first metal pattern disposed on the second electrode, a variable resistance pattern interposed between the first metal pattern and at least one among the plurality of second conductive lines, and a first spacer disposed on a sidewall of the variable resistance pattern, a sidewall of the first metal pattern and a sidewall of the second electrode.
Public/Granted literature
- US20210104671A1 VARIABLE RESISTANCE MEMORY DEVICE Public/Granted day:2021-04-08
Information query
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