Invention Grant
- Patent Title: Power amplifier module with temperature compensation
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Application No.: US16841588Application Date: 2020-04-06
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Publication No.: US11277102B2Publication Date: 2022-03-15
- Inventor: Su Yeon Han
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2019-0172975 20191223
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/30 ; H03F3/21 ; H03F1/02

Abstract:
A power amplifier module includes a power amplifier including an amplifier including an amplifying transistor configured to amplify an input signal, and output an output signal, and a bias circuit including a bias transistor configured to provide a bias current to the amplifying transistor; and a controller configured to provide a control current to the bias transistor, wherein the controller is configured to vary the control current based on a temperature of the amplifying transistor.
Public/Granted literature
- US20210194436A1 POWER AMPLIFIER MODULE WITH TEMPERATURE COMPENSATION Public/Granted day:2021-06-24
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