Invention Grant
- Patent Title: Composite nitride-based film structure and method for manufacturing same
-
Application No.: US16637553Application Date: 2018-11-21
-
Publication No.: US11280027B2Publication Date: 2022-03-22
- Inventor: Takahide Hirasaki , Daisuke Suetsugu , Takafumi Okuma
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2017-245402 20171221,JPJP2018-166005 20180905
- International Application: PCT/JP2018/042932 WO 20181121
- International Announcement: WO2019/123954 WO 20190627
- Main IPC: C30B25/06
- IPC: C30B25/06 ; C30B29/38 ; C30B29/42 ; C30B29/44 ; C30B29/20 ; C23C14/06 ; C30B29/22 ; C30B25/18 ; C23C14/34 ; C30B29/36
Abstract:
A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.
Public/Granted literature
- US20200255977A1 COMPOSITE NITRIDE-BASED FILM STRUCTURE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2020-08-13
Information query
IPC分类:
