Invention Grant
- Patent Title: Method of measuring misregistration in the manufacture of topographic semiconductor device wafers
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Application No.: US16647092Application Date: 2020-02-14
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Publication No.: US11281112B2Publication Date: 2022-03-22
- Inventor: Daria Negri , Amnon Manassen , Gilad Laredo
- Applicant: KLA CORPORATION
- Applicant Address: US CA Milpitas
- Assignee: KLA CORPORATION
- Current Assignee: KLA CORPORATION
- Current Assignee Address: US CA Milpitas
- Agency: Hodgson Russ LLP
- International Application: PCT/US2020/018200 WO 20200214
- International Announcement: WO2020/168140 WO 20200820
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G06T7/00

Abstract:
A method of measuring misregistration in the manufacture of semiconductor device wafers including providing a multilayered semiconductor device wafer including at least a first layer and a second layer including at least one misregistration measurement target including a first periodic structure formed together with the first layer having a first pitch and a second periodic structure formed together with the second layer having a second pitch, imaging the first layer and the second layer at a depth of focus and using light having at least one first wavelength that causes images of both the first layer and the second layer to appear in at least one plane within the depth of focus and quantifying offset in the at least one plane between the images of the first layer and the second layer, thereby to calculate misregistration of the first layer and the second layer.
Public/Granted literature
- US20210200104A1 METHOD OF MEASURING MISREGISTRATION IN THE MANUFACTURE OF TOPOGRAPHIC SEMICONDUCTOR DEVICE WAFERS Public/Granted day:2021-07-01
Information query
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