Invention Grant
- Patent Title: Bias circuits and improved linearity bias schemes for RF power devices
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Application No.: US17159825Application Date: 2021-01-27
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Publication No.: US11281245B1Publication Date: 2022-03-22
- Inventor: Christophe Joly , Sonoko Aristud
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: Wolfspeed, Inc.
- Current Assignee: Wolfspeed, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: G05F1/02
- IPC: G05F1/02 ; G05F3/04 ; G05F3/24 ; G05F1/56 ; H03K17/687
Abstract:
A radio frequency (“RF”) power device includes a RF power transistor, and a bias circuit coupled between a reference voltage input and an input terminal of the RF power transistor. The bias circuit includes an impedance control circuit that is configured to vary an impedance of the bias circuit at the input terminal of the RF power transistor responsive to a RF input signal provided to the input terminal, and/or a current control circuit that is configured to control a bias current provided to the input terminal of the RF power transistor responsive to variations in operating characteristics of the RF power transistor. Related RF power amplifiers and device packages are also discussed.
Information query
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