Invention Grant
- Patent Title: Etching method and etching device
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Application No.: US16316128Application Date: 2017-05-31
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Publication No.: US11282714B2Publication Date: 2022-03-22
- Inventor: Akifumi Yao , Kunihiro Yamauchi , Tatsuo Miyazaki , Jun Lin , Susumu Yamauchi , Kazuaki Nishimura
- Applicant: CENTRAL GLASS COMPANY, LIMITED , TOKYO ELECTRON LIMITED
- Applicant Address: JP Yamaguchi; JP Tokyo
- Assignee: CENTRAL GLASS COMPANY, LIMITED,TOKYO ELECTRON LIMITED
- Current Assignee: CENTRAL GLASS COMPANY, LIMITED,TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Yamaguchi; JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPJP2016-146303 20160726
- International Application: PCT/JP2017/020237 WO 20170531
- International Announcement: WO2018/020822 WO 20180201
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/3213 ; H01L21/67
Abstract:
The etching method of the present invention includes the step of supplying a first mixed gas containing a β-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a β-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.
Public/Granted literature
- US20210287915A1 ETCHING METHOD AND ETCHING DEVICE Public/Granted day:2021-09-16
Information query
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