A method of manufacturing a microelectronic device may include forming a wiring layer on a first surface of a wafer. The method may also include forming a modified layer along separation regions for each microelectronic device of the wafer by focusing a laser on an inside portion of the wafer. The method may also include removing material from the second surface of the wafer. The wafer may be cooled to a temperature where a low dielectric constant layer extending across the separation regions is brittle while the material is removed from the second surface of the wafer. The method may further include separating the wafer along the separation region to form separate microelectronic devices.