A semiconductor chip may have a radiation-permeable support, a semiconductor body, and a transparent current spreading layer. The semiconductor body may have an n-sided semiconductor layer, a p-sided semiconductor layer, and an optically active area therebetween. The semiconductor body may be secured to the support by means of a radiation permeable connection layer. The current spread layer may be based on zinc selenide and may be adjacent to the n-sided semi-conductor layer. A method for producing this type of semiconductor chip is also disclosed.