Technologies relating to RRAM-based crossbar array circuits with increase temperature stability are disclosed. An example apparatus includes: a bottom electrode; a filament forming layer formed on the bottom electrode; and a top electrode formed on the filament forming layer, wherein the filament forming layer is configured to form a filament within the filament forming layer when applying a switching voltage upon the filament forming layer, and wherein a material of the filament includes nitrogen-doped Ta2O5, Ta2N/Ta2O5, or TaNyOz.