- Patent Title: Solid-state imaging device, driving method, and electronic device
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Application No.: US16461942Application Date: 2017-11-10
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Publication No.: US11284024B2Publication Date: 2022-03-22
- Inventor: Naoki Kawazu , Atsushi Suzuki , Takumi Oka
- Applicant: Sony Semiconductor Solutions Corporation
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: JPJP2016-228617 20161125,JPJP2017-202402 20171019
- International Application: PCT/JP2017/040618 WO 20171110
- International Announcement: WO2018/096955 WO 20180531
- Main IPC: H04N5/355
- IPC: H04N5/355 ; H04N5/3745 ; H04N5/378

Abstract:
The present technology relates to a solid-state imaging device, a driving method, and an electronic device that are able to enhance a gray scale of a combined pixel value obtained from a pixel including a plurality of photoelectric conversion units having different light receiving sensitivities.
In a pixel array unit, a pixel including a plurality of photoelectric conversion units having different light receiving sensitivities is disposed. An analog to digital (AD) conversion unit that compares an electric signal corresponding to a charge of the photoelectric conversion unit having a low light receiving sensitivity among the plurality of photoelectric conversion units included in the pixel of the pixel array unit with a nonlinear reference signal that changes nonlinearly to perform AD conversion on the electric signal. The present technology is able to be applied to, for example, a complementary metal-oxide semiconductor (CMOS) image sensor.
In a pixel array unit, a pixel including a plurality of photoelectric conversion units having different light receiving sensitivities is disposed. An analog to digital (AD) conversion unit that compares an electric signal corresponding to a charge of the photoelectric conversion unit having a low light receiving sensitivity among the plurality of photoelectric conversion units included in the pixel of the pixel array unit with a nonlinear reference signal that changes nonlinearly to perform AD conversion on the electric signal. The present technology is able to be applied to, for example, a complementary metal-oxide semiconductor (CMOS) image sensor.
Public/Granted literature
- US20190327430A1 SOLID-STATE IMAGING DEVICE, DRIVING METHOD, AND ELECTRONIC DEVICE Public/Granted day:2019-10-24
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