- Patent Title: Integrated circuit with asymmetric arrangements of memory arrays
-
Application No.: US16794104Application Date: 2020-02-18
-
Publication No.: US11289141B2Publication Date: 2022-03-29
- Inventor: Xiu-Li Yang , He-Zhou Wan , Kuan Cheng , Ching-Wei Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , TSMC CHINA COMPANY LIMITED
- Applicant Address: TW Hsinchu; CN Shanghai
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,TSMC CHINA COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,TSMC CHINA COMPANY LIMITED
- Current Assignee Address: TW Hsinchu; CN Shanghai
- Agency: Maschoff Brennan
- Priority: CN201911411056.5 20191231
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C8/10 ; G11C8/12 ; G11C8/14

Abstract:
An integrated circuit includes a first array of memory cells, a second array of memory cells, a first pair of complementary data lines, a second pair of complementary data lines, and a third pair of complementary data lines. The first pair of complementary data lines extend along the first array of memory cells, and are coupled to the first array of memory cells. The second pair of complementary data lines extend along the second array of memory cells, and are coupled to the first pair of complementary data lines. The third pair of complementary data lines extend along the second array of memory cells, and are coupled to the second array of memory cells. A number of rows of memory cells in the first array of memory cells is different from a number of rows of memory cells in the second array of memory cells.
Public/Granted literature
- US20210201972A1 INTEGRATED CIRCUIT Public/Granted day:2021-07-01
Information query