Invention Grant
- Patent Title: SOT-MRAM with shared selector
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Application No.: US17002351Application Date: 2020-08-25
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Publication No.: US11289143B2Publication Date: 2022-03-29
- Inventor: MingYuan Song , Shy-Jay Lin , Chien-Min Lee , William Joseph Gallagher
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G01R33/09 ; H01L27/22 ; H01L43/04 ; H01L43/08 ; H01L43/10 ; H01L43/14
Abstract:
A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.
Public/Granted literature
- US20210134339A1 SOT-MRAM with Shared Selector Public/Granted day:2021-05-06
Information query
