Methods, systems, and devices for word line timing management are described. In some examples, a digit line may be precharged as part of accessing a memory cell. The memory cell may include a storage component and a selection component. A word line may be coupled with the selection component, and the word line may be selected in order to couple the storage component with the digit line, by way of the selection component. The word line may be selected while the digit line is still being precharged, and the storage component may become coupled with the digit line with reduced delay after the end of precharging of the digit line, concurrent with the end of the precharging of the digit line, or while the digit line is still being charged. Related techniques for sensing a logic state stored by the memory cell are also described.