Invention Grant
- Patent Title: Word line and control gate line tandem decoder for analog neural memory in deep learning artificial neural network
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Application No.: US17104385Application Date: 2020-11-25
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Publication No.: US11289164B2Publication Date: 2022-03-29
- Inventor: Hieu Van Tran , Thuan Vu , Stanley Hong , Stephen Trinh , Anh Ly
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G06N3/06 ; G06N3/063 ; G11C11/54
Abstract:
Various embodiments of tandem row decoders are disclosed. Each embodiment of a tandem row decoder comprises a word line decoder and a control gate decoder. The tandem row decoder exhibits reduced leakage current on the word line and the control gate line when the tandem row decoder is not enabled.
Public/Granted literature
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