Invention Grant
- Patent Title: Compositions for the filling of high aspect ratio vertical interconnect access (VIA) holes
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Application No.: US16703574Application Date: 2019-12-04
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Publication No.: US11289238B2Publication Date: 2022-03-29
- Inventor: Seigi Suh
- Applicant: Heraeus Precious Metals North America Conshohocken LLC
- Applicant Address: US PA West Conshohocken
- Assignee: Heraeus Precious Metals North America Conshohocken LLC
- Current Assignee: Heraeus Precious Metals North America Conshohocken LLC
- Current Assignee Address: US PA West Conshohocken
- Agency: Blank Rome LLP
- Main IPC: H01B1/22
- IPC: H01B1/22 ; C08L63/00 ; C08K3/08 ; C08K5/17 ; C08K5/5415 ; C08K7/18 ; C09D11/52

Abstract:
A solvent-free electroconductive composition may be used to make electroconductive lines on a surface of a substrate or electroconductive plugs within via holes of a substrate. The solvent-free electroconductive composition is generally made of about 40 to about 95 wt % of a conductive component, about 4 to about 30 wt % of a polymer or oligomer comprising a reactive functional group, up to about 20 wt % of a monomeric diluent comprising a reactive functional group, and up to about 3 wt % of a curing agent. In some instances, the solvent-free electroconductive composition further includes up to about 3 wt % of a lubricating compound. Substrates made using solvent-free electroconductive compositions may be used in printed circuit boards, integrated circuits, solar cells, capacitors, resistors, thermistors, varistors, resonators, transducers, inductors, and multilayer ferrite beads.
Public/Granted literature
- US20210174983A1 COMPOSITIONS FOR THE FILLING OF HIGH ASPECT RATIO VERTICAL INTERCONNECT ACCESS (VIA) HOLES Public/Granted day:2021-06-10
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