A method of fabrication of a semiconducting structure intended to be assembled to a second support by hybridisation. The semiconducting structure comprising an active layer comprising a nitrided semiconductor. The method comprises a step for the formation of at least one first and one second insert and during this step, a nickel layer is formed in contact with the support surface, and a localised physico-chemical etching step of the active layer, a part of the active layer comprising the active region being protected by the nickel layer.