According to one embodiment, a semiconductor storage device includes a stacked body above a substrate. The stacked body includes a first stacked region in which a first insulating layer and a second insulating layer are alternately stacked and a second stacked region in which a conductive layer and the first insulating layer are alternately stacked. The semiconductor storage device includes a memory pillar that extends through the second stacked region of the stacked body in a stacking direction. The second insulating layer comprising a first insulating material within the first stacked region and a second insulating material on ends of the second insulating layer in a direction intersecting to the stacking direction.