Invention Grant
- Patent Title: Microlenses for semiconductor device with single-photon avalanche diode pixels
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Application No.: US16402429Application Date: 2019-05-03
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Publication No.: US11289524B2Publication Date: 2022-03-29
- Inventor: Marc Allen Sulfridge , Byounghee Lee , Ulrich Boettiger
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent David K. Cole
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/107 ; H04N5/351 ; H04N5/378 ; H04N5/369

Abstract:
An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by square toroidal microlenses to direct light incident on the pixels onto photosensitive regions of the pixels. The square toroidal microlenses may be formed as first and second sets of microlenses aligned with every other SPAD pixel and may allow the square toroidal microlenses to be formed without gaps between adjacent lenses. Additionally or alternatively, a central portion of each square toroidal microlenses may be filled by a fill-in microlens. Together, the square toroidal microlenses and the fill-in microlenses may form convex microlenses over each SPAD pixel. The fill-in microlenses may be formed from material having a higher index of refraction than material that forms the square toroidal microlenses.
Public/Granted literature
- US20200295069A1 MICROLENSES FOR SEMICONDUCTOR DEVICE WITH SINGLE-PHOTON AVALANCHE DIODE PIXELS Public/Granted day:2020-09-17
Information query
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