Invention Grant
- Patent Title: Method and system for providing a variation resistant magnetic junction-based XNOR cell usable in neuromorphic computing
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Application No.: US15886179Application Date: 2018-02-01
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Publication No.: US11290110B2Publication Date: 2022-03-29
- Inventor: Borna J. Obradovic , Titash Rakshit , Ryan M. Hatcher , Jorge A. Kittl , Mark S. Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: H03K19/21
- IPC: H03K19/21 ; G06N3/063 ; H03K19/18

Abstract:
A hardware cell and method for performing a digital XNOR of an input signal and weights are described. The hardware cell includes input lines, a plurality of pairs of magnetic junctions, output transistors and at least one selection transistor coupled with the output transistors. The input lines receive the input signal and its complement. The magnetic junctions store the weight. Each magnetic junction includes a reference layer, a free layer and a nonmagnetic spacer layer between the reference layer and the free layer. The free layer has stable magnetic states and is programmable using spin-transfer torque and/or spin-orbit interaction torque. The first magnetic junction of a pair receives the input signal. The second magnetic junction of the pair receives the input signal complement. The output transistors are coupled with the magnetic junctions such that each pair of magnetic junctions forms a voltage divider. The output transistors form a sense amplifier.
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