Electrically-processed laser and scintillator materials
Abstract:
A method of treating a substrate comprises applying an electric field to a substrate comprising a layer of a dopant on at least one surface; applying a predetermined temperature to the substrate in the electric field; applying the electric field and the predetermined temperature for a time sufficient to induce migration of the dopant into the substrate to provide a doped substrate; and removing the electric field and returning the doped substrate to about room temperature, wherein the doped substrate is characterized in that a spectral laser output of the doped substrate exhibits a nominally single frequency having a linewidth less than about 5 nm. The substrate may be a glass material, a single crystal material, a poly-crystalline material, a ceramic material, or a semiconductor material, which may be optically transparent. Before treatment, the substrate may be an undoped substrate or a doped substrate.
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