Invention Grant
- Patent Title: Substrate processing apparatus, method for manufacturing semiconductor device and vaporizer
-
Application No.: US15870283Application Date: 2018-01-12
-
Publication No.: US11293096B2Publication Date: 2022-04-05
- Inventor: Atsushi Morikawa , Masakazu Shimada , Takeshi Kasai , Kenichi Suzaki , Hirohisa Yamazaki , Yoshimasa Nagatomi
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; C23C16/455 ; C23C16/40 ; C23C16/458 ; C23C16/448
Abstract:
A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.
Public/Granted literature
- US20180135176A1 SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND VAPORIZER Public/Granted day:2018-05-17
Information query
IPC分类:
