Invention Grant
- Patent Title: Scanning sensor having a spin defect
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Application No.: US16492259Application Date: 2018-03-14
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Publication No.: US11293940B2Publication Date: 2022-04-05
- Inventor: Christian Degen , Jens Boss , Kevin Chang , Jan Rhensius
- Applicant: ETH Zurich
- Applicant Address: CH Zurich
- Assignee: ETH Zurich
- Current Assignee: ETH Zurich
- Current Assignee Address: CH Zurich
- Agency: The Webb Law Firm
- Priority: EP17161281 20170316
- International Application: PCT/EP2018/056327 WO 20180314
- International Announcement: WO2018/167115 WO 20180920
- Main IPC: G01Q20/04
- IPC: G01Q20/04 ; G01Q60/52 ; G01Q70/14

Abstract:
A sensor device includes a carrier, a force feedback sensor, and a probe containing a spin defect, the probe being connected to the force feedback sensor either directly or indirectly via a handle structure. In order to couple the spin defect to a microwave field in an efficient and robust manner, the sensor device includes an integrated microwave antenna arranged at a distance of less than 500 micrometers from the spin defect. The sensor device can be configured as a self-contained exchangeable cartridge that can easily be mounted in a sensor mount of a scanning probe microscope.
Public/Granted literature
- US20210140996A1 Scanning Sensor Having a Spin Defect Public/Granted day:2021-05-13
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