A memory sub-system includes a plurality of memory components where at least two of the memory components are configured to operate at different supply voltages. A capacitive voltage divider (CVD) configured to, responsive to a status of use of each of the memory components, select between a plurality of connections of a plurality of capacitors to reduce an input voltage of the memory sub-system. The plurality of connections is configured to provide different voltage magnitudes that correspond to the different supply voltages, and the CVD is further configured to output the different supply voltages to enable the use of each of the memory components.