Invention Grant
- Patent Title: Mask substrate and method for forming mask substrate
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Application No.: US16715929Application Date: 2019-12-16
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Publication No.: US11294273B2Publication Date: 2022-04-05
- Inventor: Chien-Hsing Lee , Chin-Lung Ting , Jung-Chuan Wang , Hong-Sheng Hsieh
- Applicant: InnoLux Corporation
- Applicant Address: TW Miao-Li County
- Assignee: InnoLux Corporation
- Current Assignee: InnoLux Corporation
- Current Assignee Address: TW Miao-Li County
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G03F1/60
- IPC: G03F1/60

Abstract:
A method for forming a mask substrate is provided. The method includes providing a first base and providing a mask layer on the first base. The method also includes patterning the mask layer to form a pattern, wherein the first base and the pattern form a patterned substrate and providing a first substrate. The method further includes providing an optical layer on the first substrate or on the patterned substrate and assembling the first substrate and the patterned substrate to form the mask substrate.
Public/Granted literature
- US20210124257A1 MASK SUBSTRATE AND METHOD FOR FORMING MASK SUBSTRATE Public/Granted day:2021-04-29
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