Invention Grant
- Patent Title: Photoresist pattern shrinking composition and pattern shrinking method
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Application No.: US16304095Application Date: 2017-06-20
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Publication No.: US11294287B2Publication Date: 2022-04-05
- Inventor: Seung Hun Lee , Seung Hyun Lee , Su Jin Lee , Gi Hong Kim
- Applicant: YOUNG CHANG CHEMICAL CO., LTD
- Applicant Address: KR Gyeongsangbuk-do
- Assignee: YOUNG CHANG CHEMICAL CO., LTD
- Current Assignee: YOUNG CHANG CHEMICAL CO., LTD
- Current Assignee Address: KR Gyeongsangbuk-do
- Agency: Novick, Kim & Lee, PLLC
- Agent Jae Youn Kim
- Priority: KR10-2016-0079357 20160624
- International Application: PCT/KR2017/006461 WO 20170620
- International Announcement: WO2017/222275 WO 20171228
- Main IPC: G03F7/40
- IPC: G03F7/40 ; C11D1/72 ; C11D3/18 ; C11D3/20 ; C11D3/32 ; C11D3/43 ; H01L21/027

Abstract:
Provided is a composition for shrinking a photoresist pattern, which is capable of shrinking a photoresist pattern using a photoresist during the fabrication of a semiconductor, and to a method of shrinking a pattern using the composition, whereby a pattern to be formed can be shrunken in a photoresist-patterning process, thus remarkably decreasing the number of steps of a semiconductor fabrication process and reducing the fabrication time and costs.
Information query
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