The present disclosure generally relates to methods of operating storage devices. A controller of the storage device is configured to retrieve a first command to write data to one or more first logical blocks of a first zone, and direct memory access (DMA) read and write the data associated with the first command to the first logical blocks. The first logical blocks are between a zone starting point of the first zone and a zone capacity of the first zone. The controller is configured to retrieve a second command to write data to one or more second logical blocks of the first zone, and DMA read and write the data associated with the second command to the second logical blocks. The second logical blocks are between the zone starting and the zone capacity of the first zone, and the first logical blocks are non-sequential to the second logical blocks.