Invention Grant
- Patent Title: Offset cancellation voltage latch sense amplifier for non-volatile memory
-
Application No.: US16912144Application Date: 2020-06-25
-
Publication No.: US11295788B2Publication Date: 2022-04-05
- Inventor: Wei-Ming Ku
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsinchu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C16/28 ; G11C7/12 ; G11C16/04 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; G11C16/34

Abstract:
A method provided herein is adapted to a sense amplifier having a first cross-coupled latch and a second cross-coupled latch, each of which includes a first pair of transistors and a pair of coupling capacitors coupled to respective gate terminals of the first pair of transistors. The method includes, during a first phase, charging the pair of coupling capacitors of a first pair of transistors at a first cross-coupled latch to achieve zeroing and providing a first set of input voltages to a second cross-coupled latch, and, during a second phase following the first phase, discharging the pair of coupling capacitors to cancel a mismatch between the first pair of transistors and comparing the first set of input voltages provided to the second cross-coupled latch to generate a first set of output voltages.
Public/Granted literature
- US20210050039A1 OFFSET CANCELLATION VOLTAGE LATCH SENSE AMPLIFIER FOR NON-VOLATILE MEMORY Public/Granted day:2021-02-18
Information query