Invention Grant
- Patent Title: Data reading circuit and storage unit
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Application No.: US16864607Application Date: 2020-05-01
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Publication No.: US11295795B2Publication Date: 2022-04-05
- Inventor: Tengye Wang , Jiaxu Peng , Tao Wang , Zijian Zhao
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai; CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201910380361.6 20190508
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
The present disclosure provides a data reading circuit and a storage unit. The data reading circuit includes a being read unit connected to a voltage stabilizing unit and configured to store data. The voltage stabilizing unit is configured to stabilize and output a current from the being read unit to a first amplifying unit. The first amplifying unit is configured to amplify and output the current from the being read unit to a comparing unit. A reference unit is connected to a second amplifying unit, to output a reference current to the second amplifying unit. The second amplifying unit is configured to amplify and output the reference current to the comparing unit. The comparing unit is configured to compare a comparing point voltage, that is based on the amplified current of the being read unit and the amplified reference current, with a reference voltage and to output comparison results.
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