Invention Grant
- Patent Title: Integrated circuit device including vertical memory
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Application No.: US16781986Application Date: 2020-02-04
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Publication No.: US11295815B2Publication Date: 2022-04-05
- Inventor: Kwanyong Kim , Sunil Shim , Wonseok Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2019-0068802 20190611
- Main IPC: G11C16/08
- IPC: G11C16/08 ; G11C16/04

Abstract:
An integrated circuit device includes a plurality of word lines, a string selection line structure stacked on the plurality of word lines, and a plurality of channel structures extending in a vertical direction through the plurality of word lines and the string selection line structure. The string selection line structure includes a string selection bent line including a lower horizontal extension portion extending in a horizontal direction at a first level higher than the plurality of word lines, an upper horizontal extension portion extending in the horizontal direction at a second level higher than the first level, and a vertical extension portion connected between the lower horizontal extension portion and the upper horizontal extension portion.
Information query