Invention Grant
- Patent Title: Dual sense bin balancing in NAND flash
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Application No.: US16917291Application Date: 2020-06-30
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Publication No.: US11295819B2Publication Date: 2022-04-05
- Inventor: Jonas Goode , Richard Galbraith , Henry Yip , Idan Alrod , Eran Sharon
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- Agent Steven H. Versteeg
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/28 ; G11C11/56

Abstract:
A controller utilizes dual sense bin balancing (DSBB) to adjust a read level between memory states of an array of NAND flash memory cells. One or more iterations of DSBB may be performed to provide a read level. Each iteration of the DSBB includes performing a first sense read, performing a second sense read, determining a read error, and adjusting the initial read level. The first sense read is performed at a first offset of an initial read level of memory cells. The second sense read is performed at a second offset of the initial read level of memory cells. A read error is determined from the first sense read and the second sense read. The read level is adjusted by the read error. A read of the randomized data pattern is conducted with the adjusted read level of a last iteration of the DSBB.
Public/Granted literature
- US20210407598A1 Dual Sense Bin Balancing In NAND Flash Public/Granted day:2021-12-30
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