Member for semiconductor manufacturing device
Abstract:
According to one embodiment, a member for a semiconductor manufacturing device includes an alumite base material including a concavity, and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes a first region, and a second region provided in the concavity and located between the first region and the alumite base material. An average particle diameter in the first region is shorter than an average particle diameter in the second region.
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