Invention Grant
- Patent Title: Virtual wafer techniques for fabricating semiconductor devices
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Application No.: US16372381Application Date: 2019-04-01
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Publication No.: US11295949B2Publication Date: 2022-04-05
- Inventor: M. Ayman Shibib , Kyle Terrill
- Applicant: Siliconix Incorporated
- Applicant Address: US CA San Jose
- Assignee: Siliconix Incorporated
- Current Assignee: Siliconix Incorporated
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/683 ; H01L29/04 ; H01L29/66
Abstract:
A method of fabricating semiconductor devices including epitaxially depositing a heavily doped substrate layer that is substantially free of crystalline defects on a lightly doped virtual substrate. The device regions of the semiconductor devices can be fabricated about the heavily doped substrate layer before the lightly doped virtual substrate is removed.
Public/Granted literature
- US20200312657A1 VIRTUAL WAFER TECHNIQUES FOR FABRICATING SEMICONDUCTOR DEVICES Public/Granted day:2020-10-01
Information query
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