- Patent Title: Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors
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Application No.: US16507777Application Date: 2019-07-10
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Publication No.: US11295962B2Publication Date: 2022-04-05
- Inventor: Christopher J. Kenney , Julie D. Segal
- Applicant: The Board of Trustees of the Leland Stanford Junior University
- Applicant Address: US CA Stanford
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Stanford
- Agency: Lumen Patent Firm
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/265 ; H01L31/18 ; H01L31/102 ; G01T1/24
Abstract:
Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.
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