Invention Grant
- Patent Title: Barrier structures between external electrical connectors
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Application No.: US16504807Application Date: 2019-07-08
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Publication No.: US11296012B2Publication Date: 2022-04-05
- Inventor: Chia-Chun Miao , Shih-Wei Liang , Kai-Chiang Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L23/31 ; H01L23/525

Abstract:
A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.
Public/Granted literature
- US20190333841A1 Barrier Structures Between External Electrical Connectors Public/Granted day:2019-10-31
Information query
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