Invention Grant
- Patent Title: Integrated circuit with backside power rail and backside interconnect
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Application No.: US16900687Application Date: 2020-06-12
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Publication No.: US11296070B2Publication Date: 2022-04-05
- Inventor: Shih-Wei Peng , Guo-Huei Wu , Jiann-Tyng Tzeng
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Foley & Lardner LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/092 ; H01L23/528 ; H01L21/8238 ; G06F30/392 ; G06F30/394 ; G06F119/18

Abstract:
Disclosed embodiments herein relate to an integrated circuit including metal rails. In one aspect, the integrated circuit includes a first layer including a first metal rail and a second layer including a second metal rail, where the second layer is above the first layer along a first direction. In one aspect, the integrated circuit includes a third layer including an active region of a transistor, where the third layer is above the second layer along the first direction. In one aspect, the integrated circuit includes a fourth layer including a third metal rail, where the fourth layer is above the third layer along the first direction. In one aspect, the integrated circuit includes a fifth layer including a fourth metal rail, where the fifth layer is above the fourth layer along the first direction.
Public/Granted literature
- US20210391318A1 INTEGRATED CIRCUIT WITH BACKSIDE POWER RAIL AND BACKSIDE INTERCONNECT Public/Granted day:2021-12-16
Information query
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