Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16765416Application Date: 2018-02-27
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Publication No.: US11296073B2Publication Date: 2022-04-05
- Inventor: Yuki Hata , Akira Yamamoto
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2018/007134 WO 20180227
- International Announcement: WO2019/167104 WO 20190906
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/088

Abstract:
An object is to provide a semiconductor device that can prevent increase in the package size and detect a current with high precision by suppressing a current induced by magnetic flux. A semiconductor device 1 is connectable to a control board 100 detecting a current flowing through an IGBT 3 included in the semiconductor device 1 and functioning as a semiconductor element. The semiconductor device 1 includes an insulating substrate, the IGBT 3, and a sense resistor 4. The IGBT 3 is disposed on the insulating substrate 2, and includes a sense electrode and an emitter electrode. The sense resistor 4 is disposed on the insulating substrate 2, and has one end connected to the sense electrode and the other end connected to the emitter electrode. The control board 100 detects a potential difference between both ends of the sense resistor 4 to detect the current flowing through the IGBT 3.
Public/Granted literature
- US20200335492A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-10-22
Information query
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