Backside illuminated image sensor and method of manufacturing the same
Abstract:
A backside illuminated image sensor includes a substrate having a frontside surface, a backside surface and a recess formed in a backside surface portion thereof, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, an anti-reflective layer disposed on the backside surface of the substrate, and a second bonding pad disposed in the recess and electrically connected with the bonding pad. The anti-reflective layer includes a metal oxide layer disposed on the backside surface of the substrate, a first silicon insulating layer disposed on the metal oxide layer, and a second silicon insulating layer disposed on the first silicon insulating layer. The second silicon insulating layer includes a first portion disposed on an inner side surface of the recess and a second portion disposed on a bottom surface of the recess.
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