Invention Grant
- Patent Title: Backside illuminated image sensor and method of manufacturing the same
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Application No.: US16748341Application Date: 2020-01-21
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Publication No.: US11296138B2Publication Date: 2022-04-05
- Inventor: Chang Hun Han , In Guen Yeo , Jong Man Kim , Seong Jin Kim
- Applicant: DB HITEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: DB HITEK CO., LTD.
- Current Assignee: DB HITEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Patterson Thuente Pedersen, P.A.
- Priority: KR10-2019-0008302 20190122
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A backside illuminated image sensor includes a substrate having a frontside surface, a backside surface and a recess formed in a backside surface portion thereof, pixel regions disposed in the substrate, an insulating layer disposed on the frontside surface of the substrate, a bonding pad disposed on a frontside surface of the insulating layer, an anti-reflective layer disposed on the backside surface of the substrate, and a second bonding pad disposed in the recess and electrically connected with the bonding pad. The anti-reflective layer includes a metal oxide layer disposed on the backside surface of the substrate, a first silicon insulating layer disposed on the metal oxide layer, and a second silicon insulating layer disposed on the first silicon insulating layer. The second silicon insulating layer includes a first portion disposed on an inner side surface of the recess and a second portion disposed on a bottom surface of the recess.
Public/Granted literature
- US20200235144A1 BACKSIDE ILLUMINATED IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-07-23
Information query
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