An inorganic light emitting diode device includes: a substrate including a plurality of sub-pixels; a thin film transistor (TFT) in each of the plurality of sub-pixels, wherein the TFT has at least one inorganic layer; an encapsulation layer on an organic light emitting layer, wherein the encapsulation layer includes at least one organic encapsulation layer and at least one inorganic encapsulation layer; and an opening exposing the inorganic layer of the TFT, wherein the opening connects the at least one inorganic encapsulation layer with the inorganic layer of the TFT.