Invention Grant
- Patent Title: Seal material for air gaps in semiconductor devices
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Application No.: US16937344Application Date: 2020-07-23
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Publication No.: US11296187B2Publication Date: 2022-04-05
- Inventor: Shuen-Shin Liang , Chen-Han Wang , Keng-Chu Lin , Tetsuji Ueno , Ting-Ting Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L27/088 ; H01L29/417 ; H01L29/66 ; H01L29/78
Abstract:
The present disclosure relates to a semiconductor device including first and second terminals formed on a fin region and a seal layer formed between the first and second terminals. The seal layer includes a silicon carbide material doped with oxygen. The semiconductor device also includes an air gap surrounded by the seal layer, the fin region, and the first and second terminals.
Public/Granted literature
- US20210193798A1 SEAL MATERIAL FOR AIR GAPS IN SEMICONDUCTOR DEVICES Public/Granted day:2021-06-24
Information query
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