Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US16791472Application Date: 2020-02-14
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Publication No.: US11296188B2Publication Date: 2022-04-05
- Inventor: Hee Soo Kim , Young Ho Yang , Chang Soo Lee , Wan Sup Shin
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2019-0094041 20190801
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/417 ; H01L29/36 ; H01L27/11556 ; H01L27/11582 ; H01L29/792 ; H01L21/3065 ; H01L21/02 ; H01L29/66 ; H01L21/28 ; H01L29/788
Abstract:
A semiconductor device includes a source structure, a bit line, a stacked structure between the source structure and the bit line, a source contact structure penetrating the stacked structure and electrically coupled to the source structure, and a protective pattern interposed between the source contact structure and the source structure and having a varying thickness depending on an area of the protective pattern.
Public/Granted literature
- US20210036109A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2021-02-04
Information query
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