Invention Grant
- Patent Title: Power module and power converter
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Application No.: US16319140Application Date: 2017-10-02
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Publication No.: US11296191B2Publication Date: 2022-04-05
- Inventor: Ryuusei Fujita , Naoki Watanabe , Yuan Bu
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- Priority: JPJP2016-197865 20161006
- International Application: PCT/JP2017/035785 WO 20171002
- International Announcement: WO2018/066496 WO 20180412
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L25/07 ; H01L29/739 ; H01L29/861
Abstract:
Dielectric breakdown resistance of a power module including a SiC-IGBT and a SiC diode is improved. The power module includes a SiC-IGBT 110 and a SiC diode 111, and a film thickness of a resin layer 323 covering an upper portion of an electric field relaxation region 320 of the SiC-IGBT 110 is larger than a chip thickness of the SiC-IGBT 110, that is, for example, 200 μm or more.
Public/Granted literature
- US20210351271A1 POWER MODULE AND POWER CONVERTER Public/Granted day:2021-11-11
Information query
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