Invention Grant
- Patent Title: Bipolar transistor
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Application No.: US16591312Application Date: 2019-10-02
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Publication No.: US11296205B2Publication Date: 2022-04-05
- Inventor: Alexis Gauthier , Pascal Chevalier
- Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
- Applicant Address: FR Crolles; FR Montrouge
- Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA
- Current Assignee Address: FR Crolles; FR Montrouge
- Agency: Crowe & Dunlevy
- Priority: FR1859284 20181008
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L29/732 ; H01L21/265
Abstract:
A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
Information query
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