Invention Grant
- Patent Title: Method of making heteroepitaxial structures and device formed by the method
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Application No.: US16748327Application Date: 2020-01-21
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Publication No.: US11296208B2Publication Date: 2022-04-05
- Inventor: Steven R. J. Brueck , Stephen D. Hersee , Seung-Chang Lee , Daniel Feezell
- Applicant: UNM RAINFOREST INNOVATIONS
- Applicant Address: US NM Albuquerque
- Assignee: UNM RAINFOREST INNOVATIONS
- Current Assignee: UNM RAINFOREST INNOVATIONS
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/06 ; B82Y40/00 ; H01L29/778 ; B82Y10/00 ; H01L29/775 ; H01L29/78 ; H01L29/04 ; H01L29/16 ; H01L29/20 ; H01L27/12
Abstract:
A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.
Public/Granted literature
- US11374106B2 Method of making heteroepitaxial structures and device formed by the method Public/Granted day:2022-06-28
Information query
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