Invention Grant
- Patent Title: Power MOSFET device
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Application No.: US16644998Application Date: 2018-10-17
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Publication No.: US11296216B2Publication Date: 2022-04-05
- Inventor: Lei Liu , Yuanlin Yuan , Wei Liu , Zhendong Mao , Yi Gong
- Applicant: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Current Assignee: SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: CN201711058065.1 20171101,CN201711058204.0 20171101
- International Application: PCT/CN2018/110570 WO 20181017
- International Announcement: WO2019/085752 WO 20190509
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/45
Abstract:
Disclosed is a power MOSFET device, the power MOSFET device includes a source, a drain, a first gate, a second gate, a body diode, and a body region contact diode. The source, the drain, and the first gate constitute a first MOSFET structure. The source, the drain, and the second gate constitute a second MOSFET structure. A cathode of the body diode is connected to the drain, and an anode of the body region contact diode is connected to an anode of the body diode, a cathode of the body region contact diode is connected to the source. The first gate is configured to control turning on and off of the first MOSFET structure by means of a gate voltage. The second gate is connected to the source and configured to control turning on and off of the second MOSFET structure by means of a source voltage.
Information query
IPC分类:
