Invention Grant
- Patent Title: FinFET device and method of forming same
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Application No.: US16421744Application Date: 2019-05-24
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Publication No.: US11296225B2Publication Date: 2022-04-05
- Inventor: Hsin-Hao Yeh , Fu-Ting Yen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762 ; H01L29/66 ; H01L21/324
Abstract:
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.
Public/Granted literature
- US20200006565A1 FinFET Device and Method of Forming Same Public/Granted day:2020-01-02
Information query
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