- Patent Title: Thin film transistor having a wire grid on a channel region and manufacturing method thereof, array substrate and manufacturing method thereof, and display panel
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Application No.: US16067297Application Date: 2017-11-17
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Publication No.: US11296235B2Publication Date: 2022-04-05
- Inventor: Zhenhua Lv , Lianjie Qu , Yanfeng Wang , Hongbo Feng , Xuewen Lv , Jiantao Liu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Beijing; CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Beijing; CN Beijing
- Agency: Leason Ellis LLP
- Priority: CN201710258247.7 20170419
- International Application: PCT/CN2017/111502 WO 20171117
- International Announcement: WO2018/192217 WO 20181025
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12

Abstract:
A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display panel are provided. The thin film transistor includes an active layer and a wire grid which is disposed at least on a surface of an active region of the active layer and is made of a conductive material. The active layer includes a source region, a drain region, and the channel region between the source region and the drain region. The wire grid includes a plurality of wire grid sections which are spaced apart from each other, and in a direction from the source region to the drain region, a length of the channel region is longer than a length of the wire grid section.
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