Invention Grant
- Patent Title: Thin-film transistor substrate and display apparatus comprising the same
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Application No.: US16984789Application Date: 2020-08-04
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Publication No.: US11296238B2Publication Date: 2022-04-05
- Inventor: Hyunjung Lee , Youngkuk Kim , Miseon Seo
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Kile Park Reed & Houtteman PLLC
- Priority: KR10-2019-0178502 20191230
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/32

Abstract:
A thin-film transistor substrate and a display apparatus including the same includes a first thin-film transistor on a substrate. The first thin-film transistor includes a first semiconductor layer having a first channel area, a first source area, and a first drain area; a first lower gate electrode between the substrate and the first semiconductor layer; a first upper gate electrode on the first semiconductor layer and overlapping the first channel area; and a first electrode layer on the first upper gate electrode and electrically connected to at least one of the first source area and the first drain area. The first lower gate electrode overlaps the first channel area and the first drain area.
Public/Granted literature
- US20210202759A1 THIN-FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS COMPRISING THE SAME Public/Granted day:2021-07-01
Information query
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