A method of manufacturing a light-emitting element including, in the following order, steps of: preparing a wafer on which a semiconductor layer including an light-emission layer is formed; forming a resist film comprising a main body and a protrusion; forming a first metal film; forming a second metal film on the resist film and on the first metal film; pulling the protrusion of the resist film upward by raising and then lowering a temperature of the wafer; forming a third metal film on the second metal film and covering an end of the first metal film by the third metal film; and removing the resist film. In the step of forming the second metal film, the end of the first metal film is exposed from the second metal film.