Invention Grant
- Patent Title: Light-emitting diode
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Application No.: US16883585Application Date: 2020-05-26
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Publication No.: US11296256B2Publication Date: 2022-04-05
- Inventor: Wen-Yu Lin , Meng-Hsin Yeh , Yun-Ming Lo , Chien-Yao Tseng , Chung-Ying Chang
- Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Current Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Thomas | Horstemeyer, LLP
- Priority: CN201711218871.0 20171128
- Main IPC: H01L33/28
- IPC: H01L33/28 ; H01L25/075

Abstract:
A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1
Public/Granted literature
- US20200287083A1 LIGHT-EMITTING DIODE Public/Granted day:2020-09-10
Information query
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