Invention Grant
- Patent Title: Output circuit having voltage-withstanding mechanism
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Application No.: US17029094Application Date: 2020-09-23
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Publication No.: US11296689B2Publication Date: 2022-04-05
- Inventor: Tay-Her Tsaur , Tsung-Yen Tsai
- Applicant: REALTEK SEMICONDUCTOR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee: REALTEK SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Priority: TW10813537.4 20190930
- Main IPC: H03K17/081
- IPC: H03K17/081

Abstract:
The present disclosure discloses an output circuit having a voltage-withstanding mechanism that includes a PMOS, a NMOS, a voltage-withstanding auxiliary NMOS and a voltage-withstanding auxiliary circuit. The PMOS includes a first source terminal and a first drain terminal coupled to a voltage source and an output terminal and a first gate receiving a first input signal. The NMOS includes a second source terminal and a second drain terminal coupled to a ground terminal and a connection terminal and a second gate receiving a second input signal. The auxiliary NMOS includes a third drain terminal and a third source terminal coupled to the output terminal and the connection terminal. The auxiliary circuit is coupled to the voltage source and a third gate of the auxiliary NMOS and provides a current conducting mechanism and a resistive mechanism respectively when the output terminal is operated at a logic high level and a logic low level.
Public/Granted literature
- US20210099168A1 Output circuit having voltage-withstanding mechanism Public/Granted day:2021-04-01
Information query
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